2SK1934 silicon n-channel mos fet ade-208-1333 (z) 1st. edition mar. 2001 application high speed power switching features low on?esistance high speed switching no secondary breakdown suitable for switching regulator outline 1 2 3 to-3p 1. gate 2. drain (flange) 3. source d g s
2SK1934 2 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss 1000 v gate to source voltage v gss 30 v drain current i d 8a drain peak current i d(pulse) * 1 24 a body to drain diode reverse drain current i dr 8a channel dissipation pch* 2 150 w channel temperature tch 150 c storage temperature tstg ?5 to +150 c notes 1. pw 10 m s, duty cycle 1 % 2. value at tc = 25 c
2SK1934 3 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 1000 v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 30 v i g = 100 m a, v ds = 0 gate to source leak current i gss 10 m av gs = 25 v, v ds = 0 zero gate voltage drain current i dss 250 m av ds = 800 v, v gs = 0 gate to source cutoff voltage v gs(off) 2.0 3.0 v i d = 1 ma, v ds = 10 v static drain to source on state resistance r ds(on) 1.2 1.6 w i d = 4 a v gs = 10 v* 1 forward transfer admittance |y fs |46 si d = 4 a v ds = 20 v* 1 input capacitance ciss 2690 pf v ds = 10 v output capacitance coss 920 pf v gs = 0 reverse transfer capacitance crss 375 pf f = 1 mhz turn-on delay time t d(on) 35 ns i d = 4 a rise time t r 135 ns v gs = 10 v turn-off delay time t d(off) 300 ns r l = 7.5 w fall time t f 205 ns body to drain diode forward voltage v df 0.9 v i f = 8 a, v gs = 0 body to drain diode reverse recovery time t rr 1600 m si f = 8 a, v gs = 0, di f / dt = 100 a / m s note 1. pulse test
2SK1934 4 case temperature tc (?) power vs. temperature derating channel dissipation pch (w) 0 50 100 150 50 100 150 maximum safe operation area 50 30 10 3 1 0.3 0.1 0.05 1 3 10 30 100 300 1000 drain to source voltage v (v) drain current i (a) d ds operation in this area is limited by r ds(on) 1 ms m 100 s m pw = 10 ms (1 shot) dc operation (tc = 25?) ta = 25? 10 s 10 typical output characteristics 10 8 6 4 2 0 20 30 40 50 drain to source voltage v (v) drain current i (a) d ds v = 3.5 v 5 v gs 4 v 8 v 10 v pulse test typical transfer characteristics 10 8 6 4 2 0 24 6810 gate to source voltage v (v) drain current i (a) d gs tc = 25? ?5? 75? pulse test v = 20 v ds
2SK1934 5 drain to source saturation voltage vs. gate to source voltage 4 8 12 16 20 0.2 0.4 0.6 0.8 1.0 gate to source voltage v (v) drain to source saturation voltage v (on) (v) gs ds pulse test 2 a i = 1 a d 5 a 0 static drain to source on state resistance vs. drain current 0.2 0.5 1 2 5 10 20 0.5 1 2 5 10 20 50 drain current i (a) static drain to source on state resistance r (on) ( ) ds d w v = 10 v gs pulse test static drain to source on state resistance vs. temperature case temperature t (?) c static drain to source on state resistance r (on) ( ) ds w 5 4 3 2 1 ?0 0 40 80 120 160 pulse test i = 5 a d 0 2 a 1 a forward transfer admittance vs. drain current 50 20 10 5 2 1 0.5 0.1 0.2 0.5 1 5 10 2 drain current i (a) d forward transfer admittance |y | (s) fs tc = 25? ?5? pulse test v = 20 v ds 75?
2SK1934 6 body to drain diode reverse recovery time reverse drain current i (a) dr reverse recovery time t (ns) rr 0.2 0.5 1 2 5 10 20 100 200 500 1000 2000 5000 di/dt = 100 a/ s, v = 0 ta = 25? m gs 50 typical capacitance vs. drain to source voltage 10000 1000 100 10 0 10 20 30 40 50 drain to source voltage v (v) ds capacitance c (pf) ciss coss crss v = 0 v f = 1 mhz gs dynamic input characteristics 1000 800 600 400 200 0 40 80 120 160 200 20 16 12 8 4 0 gate charge qg (nc) drain to source voltage v (v) ds v = 250 v 400 v 600 v dd 400 v 600 v v = 250 v dd v i = 8 a gs d gate to source voltage v (v) gs v ds switching characteristics drain current i (a) d 0.1 0.2 0.5 1 2 5 10 5 10 20 50 100 200 500 switching time t (ns) t (off) v = 10 v, v = 30 v pw = 5 s, duty 1% gs m dd . : t (on) f > = t d t r d
2SK1934 7 reverse drain current vs. source to drain voltage 10 8 6 4 2 0 0.2 0.4 0.6 0.8 1.0 source to drain voltage v (v) sd reverse drain current i (a) dr pulse test 0, ? v v = 10 v gs 3 normalized transient thermal impedance g s (t) 1.0 0.1 0.3 10 m 0.03 0.01 100 m 10 m 100 m 1 10 1 m normalized transient thermal impedance vs. pulse width pulse width pw (s) t c = 25? d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1 shot pulse t pw p dm d = t pw q ch? (t) = g s (t) ? q ch? q ch? = 0.83?/w, t c = 25?
2SK1934 8 switching time test circuit vin monitor vin 10 v 50 w d.u.t. vout monitor r l v dd 30 v = . . waveforms vin t d (on) 10% t r 90% vout 10% 90% 90% t f t d (off) 10%
2SK1934 9 package dimensions f 3.2 0.2 4.8 0.2 1.5 0.3 2.8 0.6 0.2 1.0 0.2 18.0 0.5 19.9 0.2 15.6 0.3 0.5 1.0 5.0 0.3 1.6 1.4 max 2.0 2.0 14.9 0.2 3.6 0.9 1.0 5.45 0.5 5.45 0.5 hitachi code jedec eiaj mass (reference value) to-3p conforms 5.0 g as of january, 2001 unit: mm
2SK1934 10 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
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